DMG3414U Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Product specification
Features
• Low On-Resistance
• 25mΩ @ V_GS = 4.5V
• 29mΩ @ V_GS = 2.5V
• 37mΩ @ V_GS = 1.8V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DMG3414U
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Weight: 0.008 grams (approximate)
Drain
D
Gate
TOP VIEW
Source
Internal Schematic
G
S
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
T_A = 25°C
T_A = 70°C
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
20
±8
4.2
3.2
30
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Notes:
1. No purposefully added lead.
2. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
3. Repetitive rating, pulse width limited by junction temperature.
Value
0.78
162
-55 to +150
Unit
W
°C/W
°C
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