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| CZT31C Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS | |||
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Product specification
SOT-223 Plastic-Encapsulate Transistors
CZT31C TRANSISTOR (NPN)
SOT-223
FEATURES
z Complementary to CZT32C
z Power amplifier applications up to 3.0 amps.
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS(Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
* Pulsed , 2%D.C.
Symbol
Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)*
hFE(2) *
VCE(sat) *
VBE *
fT
IC=1m A,IE=0
IC=30mA,IB=0
IE=3mA,IC=0
VCB=100V,IE=0
VCE=60V,IB=0
VEB=5V,IC=0
VCE=4V,IC=1A
VCE=4V,IC=3A
IC=3.0A,IB=375mA
VCE=4V,IC=3A
VCE=10V,IC=500mA,f=1MHz
Value
Unit
100
V
100
V
5
V
3
A
1
W
150
â
-65~150
â
Min Typ Max Unit
100
V
100
V
5
V
200 uA
300 uA
1
mA
25
10
100
1.2
V
1.8
V
3
MHz
http://www.twtysemi.com
sales@twtysemi.com
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