CXT5551 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTORS

Product specification
SOT-89-3L Plastic-Encapsulate Transistors
CXT5551 TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Switching and amplification in high voltage
Applications such as telephony
z Low current(max. 600mA)
z High voltage(max.180V)
1
1. BASE
2. COLLECTOR
3. EMITTER
Marking: 1G6
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
180
V
160
V
6
V
0.6
A
0.5
W
150
℃
-65~150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)
V_CE(sat)
V_BE(sat)
V_BE(sat)
f_T
C_ob
NF
I_C=100μ A,I_E=0
I_C=1mA,I_B=0
I_E=10 μ A,I_C=0
V_CB=120V,I_E=0
V_EB=4V,I_C=0
V_CE=5V,I_C=1mA
V_CE=5V,I_C=10mA
V_CE=5V,I_C=50mA
I_C=10mA,I_B=1mA
I_C=50mA,I_B=5mA
I_C=10mA,I_B=1mA
I_C=50mA,I_B=5mA
V_CE=10V,I_C=10mA,f=100MHz
V_CB=10V,I_E=0,f=1MHz
V_CE=5V,I_c=0.2mA,
f=10Hzto15.7KHZ,Rs=10Ω
Min Typ
180
160
6
80
80
30
100
Max Unit
V
V
V
50
nA
50
nA
300
0.15
V
0.2
V
1
V
1
V
MHz
6
pF
8
dB
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2