CPH6622 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

SMD Type
Product specification
CPH6622
Features
• Low ON-resistance.
• _{2.5V drive.}
• _{Best suited for LiB charging and discharging switch.}
• _{Common-drain type.}
• _{With a built-in gate resistor.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤12ms, duty cycle≤1%
Mounted on a ceramic board (900mm²âœ•0.8mm)1unit
Mounted on a ceramic board (900mm²âœ•0.8mm)
Ratings
Unit
20
V
±12
V
3.0
A
18
A
0.9
W
1.0
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Marking : BW
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS= ±8V, VDS=0V
VDS=10V, ID=1mA
min
20
Ratings
typ
0.6
Unit
max
V
1 µA
±10 µA
1.2
V
Any and all TY products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your TY representative nearest you before using
any TY products described or contained herein in such applications.
TY assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all TY products described or contained
herein.
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