CJ818B Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-23-6L Plastic-Encapsulate Transistors

Product specification
SOT-23-6L Plastic-Encapsulate Transistors
CJ818B TRANSISTOR (PNP)
DESCRIPTIONS
The device is manfactured in low voltage PNP Planar T echnology with
“Base Island ” layout. The resulting Transistor shows exceptional high
gain performance coupled with very low saturation voltage.
FEATURE
Very low collector to emitter saturation voltage
APPLICATIONS
z Power management in portable equipments
z Switching regulator in battery charge applications
MARKING:
6
SOT-23-6L
1
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Dissipation
R_θJA
Thermal Resistance from Junction to Ambient
P_tot
Total Dissipation at TC = 25℃
R_θJC
Thermal Resistance from Junction to case (note 1)
T_J
Junction Temperature
T_stg
Storage Temperature
Note 1：Package mounted on FR4 pcb 25mm x 25mm.
Value
-30
-30
-5
-3
0.35
357
1.2
104.2
150
-55~+150
Units
V
V
V
A
W
℃/W
W
℃/W
℃
℃
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