CJ4153 Datasheet, PDF (1/2 Pages) ZP Semiconductor – SOT-523 Plastic-Encapsulate MOSFETS

Product specification
SOT-523 Plastic-Encapsulate MOSFETS
CJ4153 N-Channel 20-V(D-S) MOSFET
FEATURE
 Low R_DS(on) Improving System Efficiency
 Low Threshold Voltage ,1.5V Rated
 ESD Protected Gate
 Pb-Free Packages are Available
APPLICATIONS
 Load/Power Switches
 Power Supply Converter Circuits
 Battery Management
 Portables like Cell Phones, PDAs, Digital Cameras, Pagers,etc
MARKING: X
SOT-523
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings ( T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (note 1)
I_D
Power Dissipation (note 1)
P_D
Thermal Resistance from Junction to Ambient (note 1)
R_θJA
Operating Junction Temperature
T_J
Storage Temperature
T_stg
.
Value
20
±6
0.915
150
833
150
-55~+150
Unit
V
A
mW
℃/W
℃
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