CJ3439KDW Datasheet, PDF (1/2 Pages) ZP Semiconductor – SOT-363 Plastic-Encapsulate MOSFETS

Product specification
SOT-363 Plastic-Encapsulate MOSFETS
CJ3439KDW N channel+P Channel MOSFET
FEATURE
z Surface Mount Package
z Low R_DS(on)
z Operated at Low Logic Level Gate Drive
z ESD Protected Gate
z Including a N-ch CJ3134K and a P-ch CJ3139K
(independently) In a Package
APPLICATION
z Load/ Power Switching
z Interfacing Switching
z Battery Management for Ultra Small Portable Electronics
z Logic Level Shift
MARKING
SOT-363
(49K=Device Code
Solid Dot=Pin 1 indicator)
（Green compound） （Normal compound）
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
N-MOSFET
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
P-MOSFET
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Temperature and Thermal Resistance
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
V_DS
V_GS
I_D
I_DM
V_DS
V_GS
I_D
I_DM
R_θJA
T_J
T_STG
T_L
Value
20
±12
0.75
1.8
-20
±12
-0.66
-1.2
833
150
-55~+150
260
Unit
V
V
A
A
V
V
A
A
℃/W
℃
℃
℃
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