CJ3407 Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

Product specification
SOT-23 Plastic-Encapsulate MOSFETS
CJ3407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The CJ3407 uses advanced trench technology to provide excellent
R_DS(on) with low gate charge. This device is suitable for use as a load
switch or in PWM applications.
MARKING: 3407
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_J
T_stg
Value
-30
±20
-4.1
350
357
150
-55~+150
Unit
V
V
A
mW
℃/W
℃
℃
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