CJ3406 Datasheet, PDF (1/2 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

Product specification
SOT-23 Plastic-Encapsulate MOSFETS
CJ3406 N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION
The CJ3406 use advanced trench technology to provide excellent
R_DS(ON) and low gate charge. This device is suitable for use as a
load switch or in PWM applications.
MARKING: R6
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings ( T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
30
±20
3.6
15
0.35
357
150
-55~ +150
Unit
V
V
A
A
W
℃/W
℃
℃
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