CJ3404 Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

Product specification
SOT-23 Plastic-Encapsulate MOSFETS
CJ3404 N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION
The CJ3404 use advanced trench technology to provide excellent
R_DS(ON) and low gate charge. This device is suitable for use as a load
switch or in PWM applications.The source leads are separated to allow a
Kelvin connection to the source,which may be used to bypass the source
inductance.
SOT-23
1. GATE
2. SOURCE
3. DRAIN
MARKING: R4
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Drain-source voltage
V_DS
Gate-source voltage
V_GS
Continuous drain current (t ≤10s)
I_D
Pulsed drain current *
I_DM
Thermal resistance from junction to ambient
R_θJA
Junction temperature
T_J
Storage temperature
T_stg
* Repetitive rating : Pulse width limited by maximum junction temperature.
Value
30
±20
5.8
30
357
150
-55~ 150
Unit
V
V
A
A
℃/W
℃
℃
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