CJ3402 Datasheet, PDF (1/2 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

Product specification
SOT-23 Plastic-Encapsulate MOSFETS
CJ3402 N-Channel MOSFET
DESCRIPTION
The CJ3402 uses advanced trench technology to provide excellent
R_DS(ON) , low gate charge and operation with gate voltage as low as 2.5V.
This device is suitable for use as a load switch or in PWM application.
FEATURES
z Lead free product is acquired
z Surface mount package
SOT-23
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
z Load Switch and in PWM applications
MARKING: R2
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
30
±12
4
15
0.35
357
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
http://www.twtysemi.com
[e-mail]
4008-318-123
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