CJ3401 Datasheet, PDF (1/3 Pages) ZP Semiconductor – P-Channel Enhancement Mode MOSFET

Product specification
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401 P-Channel Enhancement Mode Field Effect Transistor
SOT-23
FEATURE
z High dense cell design for extremely low R_DS(ON).
z Exceptional on-resistance and maximum DC current capability
D
MARKING: R1
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings ( T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient (t<5s)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_J
T_STG
G
S
Value
-30
±12
-4.2
350
357
150
-55~+150
Unit
V
V
A
mW
℃/W
℃
℃
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