CJ3134KDW Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-363 Plastic-Encapsulate MOSFETS

Product specification
SOT-363 Plastic-Encapsulate MOSFETS
CJ3134KDW Dual N-Channel MOSFET
FEATURE
 Lead Free Product is Acquired
 Surface Mount Package
 N-Channel Switch with Low R_DS(on)
 Operated at Low Logic Level Gate Drive
 Equivalent to Two CJ3134K
APPLICATION
 Load/Power Switching
 Interfacing Switching
 Battery Management for Ultra Small Portable Electronics
 Logic Level Shift
MARKING: 34K
SOT-363
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Drain-source voltage
V_DS
Gate-source voltage
V_GS
Continuous drain current (t ≤10s)
I_D
Power dissipation*
P_D
Thermal resistance from junction to ambient
R_θJA
Junction temperature
T_J
Storage temperature
T_stg
* Repetitive rating : Pulse width limited by junction temperature.
Value
20
±12
0.75
0.15
833
150
-55~ +150
Unit
V
V
A
W
℃/W
℃
℃
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