CJ2101 Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-323 Plastic-Encapsulate MOSFETS

Product specification
SOT-323 Plastic-Encapsulate MOSFETS
CJ2101 P-Channel MOSFET
FEATURE
Leading Trench Technology for Low R_DS(on) Extending Battery Life
SOT-323
1. GATE
2. SOURCE
3. DRAIN
APPLICATIONS
z High Side Load Switch
z Charging Circuit
z Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc
MARKING: TS1
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t_p=10µs)
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_stg
Value
- 20
±8.0
-1.4
-3.0
0.29
431
150
-50 ~+150
Unit
V
A
W
℃/W
℃
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