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| CJ201NL Datasheet, PDF (1/1 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate Transistors | |||
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Product specification
SOT-23 Plastic-Encapsulate Transistors
CJ201NL TRANSISTOR (NPN)
SOTâ23
FEATURES
z High Collector Current Capability
z Low Collector-emitter Saturation Voltage
z High Efficiency Leading to Less Heat Generation
z Reduced PCB Requirements
z Alternatived Effectively to MOSFETS in Specific Applications
APPLICATIONS
z Power Management
z Peripheral Driver
MARKING: 201N
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
20
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
300
mW
RÎJA Thermal Resistance From Junction To Ambient
417
â/W
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55ï½+150 â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100µA, IC=0
Collector cut-off current
ICBO
VCB=30V, IE=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
hFE(1)
VCE=2V, IC=100mA
DC current gain
hFE(2)
VCE=2V, IC=500mA
hFE(3)
VCE=2V, IC=1A
VCE(sat)1 IC=100mA, IB=1mA
Collector-emitter saturation voltage
VCE(sat)2
VCE(sat)3
IC=500mA, IB=50mA
IC=750mA, IB=15mA
VCE(sat)4* IC=1A, IB=50mA
Base-emitter saturation voltage
VBE(sat)* IC=1A, IB=100mA
Base-emitter turn-on voltage
VBE(on)
VCE=2V, IC=100mA
Transition frequency
fT
VCE=10V,IC=100mA, f=100MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
1. BASE
2. EMITTER
3. COLLECTOR
Min
Typ
Max
30
20
5
0.1
0.1
350
300
280
80
110
200
250
1.1
0.75
100
20
Unit
V
V
V
µA
µA
mV
mV
mV
mV
V
V
MHz
pF
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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