CESD5V0J4 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Quad-direction ESD Protection Array

Product specification
SOT-353 Plastic-Encapsulate Diodes
CESD5V0J4 ESD Protection Diode
SOT-353
DESCRIPTION
The CESD5V0J4 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
5
4
12 3
FEATURES
z Low Leakage
z Response Time is Typically < 1 ns
z ESD Rating of Class 3 (> 16 kV) Per Human Body Model
z IEC61000−4−2 Level 4 ESD Protection
z These are Pb−Free Devices
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
Unit
IEC61000−4−2(ESD)
ESD Voltage
Air
Contact
Per Human Body Model
Per Machine Model
±15
±15
KV
16
KV
400
V
Peak Power Dissipation @ 8 X 20 ms @TA ≤ 25°C (Note 1)
P_pk
100
W
Steady State Power -- 1 Diode (Note 2)
P_D
200
mW
Thermal Resistance Junction−to−Ambient
R_ΘJA
625
℃/W
Lead Solder Temperature − Maximum (10 Second Duration)
T_L
260
℃
Junction and Storage Temperature Range
T_j, T_stg
-55 ~ +150
℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, V_F = 0.9 V Max. @ I_F = 10mA for all types)
Device
I_R (μA)
V_BR (V)
Device
V_RWM (V)
I_T
@ V_RWM
@ I_T
Marking
Max
Max
Min Max mA
V_F (V)
@I_F=200mA
Max
V_C (V)
@Max I_PP=5A
Max
C (pF)
MAX
CESD5V0J4
12
5.0
5
6.0 7.2 1.0
1.25
12.5
35
1. Non--repetitive current per Figure 1. Derate per Figure 2.
2. Only 1 diode under power. For all 4 diodes under power, P_D will be 25%. Mounted on FR--4 board with min pad.
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