C2611 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-251 Plastic-Encapsulate Transistors

S^DSM^MIPD^DTT^Tyy^ypp^pee^e
■ Features
● Collector-emitter Voltage: V(BR)CEO=400V
● Collector Current: IC=0.2A
T^Tr^ra^anⁿs^siⁱs^st^tIo^oCr^rs
Product specification
C2611
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
123
0.48+0.1
-0.1
0.53+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
1. Base
2. Collector
3. Emiitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
600
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
7
V
Collector Current -Continuous
IC
0.2
A
Collector Dissipation
PC
0.5
W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector-base cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Fall time
Storage time
Transition frequency
Symbol
Testconditons
V(BR)CBO IC = 100μA , IE = 0
V(BR)CEO IC = 1mA , IB = 0
V(BR)EBO IE = 100μA , IC = 0
ICBO VCB = 600V , IE = 0
IEBO VEB=7V,IC=0
VCE = 20V , IC = 20mA
hFE
VCE = 10V , IC = 0.25mA
VCE(sat) IC= 50mA, IB= 10 mA
VBE(sat) IC= 50mA, IB= 10 mA
tf IB1=-IB2=5mA, IC=50mA, VCC=45V
ts IB1=-IB2=5mA, IC=50mA, VCC=45V
fT VCE = 20 V , IC = 20 mA , f = 1 MHz
■ hFE Classification
Rank
hFE
10～15 15～20 20～25 25～30 30～35 35～40
Min Typ Max Unit
600
V
400
V
7
V
100 μA
100 μA
10
40
5
0.5 V
1.2 V
0.3 μs
1.5 μs
8
MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2