BZX84C3V6 Datasheet, PDF (1/2 Pages) MAKO SEMICONDUCTOR CO.,LIMITED – SOT-23 Plastic-Encapsulate Diodes

Product specification
BZX84C3V6
Features
Planar Die Construction
350mW Power Dissipation
Ideally Suited for Automated Assembly Processes
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Forward Voltage at IF = 10 mA
Power Dissipation *
Junction Temperature
Storage Temperature Range
Thermal Resistance Junction to Ambient Air *
Symbol
VF
PD
Tj
TS
RthA
*Device mounted on FR-4 PC board with recommended pad layout,
Rating
0.9
350
150
-65 to + 150
417
Unit
V
mW
/W
Electrical Characteristics Ta = 25 (unless otherwise noted)
Type
Number
Zener Voltage
Range
*1
VZ @ IZT
Maximum Zener
Impedance
*2
IZT
ZZT @
IZT
ZZK @ IZK
Nom (V) Min (V) Max (V) mA
mA
BZX84C3V6
3.6
3.4
3.8
5.0
90
600 1.0
*1. Short duration test pulse used to minimize self-heating effect.
*2. f = 1KHz.
Marking
Marking
Z15
Maximum
Reverse
Current
*1
IR
VR
A
V
5
1
Typical Temperature
Coefficient
@ IZT
mV/
Min
Max
-3.5
0
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