BZT55C2V4 Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR ZENER DIODES

■ Features
● 500mW Power Dissipation
● Low reverse current level
● Very high stability
● Low noise
● Ideal for Surface Mountted Application
Product specification
BZT55C2V4
LL-34
2.64REF
0.50
0.35
3.60
3.30
Unit: mm
1.50
1.30
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Power Dissipation
(Note 1)
PD
Forward Voltage @ IF = 200mA
VF
Thermal Resistance, Junction to Ambient Air
(Note 1)
RθJA
Operating and Storage Temperature Range
Tj, TSTG
Notes: 1. Valid provided that electrodes are kept at ambient temperature.
Rating
500
1.5
300
-65 to +175
Unit
mW
V
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Zener Voltage Range
(Note 2)
Type
VZ @ IZT
IZT
Nom (V) Min (V) Max (V) mA
BZT55C2V4 2.4
2.28
2.56
5
Notes: 2. Tested with pulses, Tp ≤100ms.
Maximum Zener
Impedance
ZZT @ IZT ZZK @ IZK
IZK
Ω
Ω
mA
85
600
1
Maximum Reverse
Current
IR @ VR
μA
V
50
1
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