BYV26E Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE：1000V CURRENT: 1.0A

Product specification
BYV26E
■ Features
● Low leakage current
● _{Excellent stability}
● _{Guaranteed avalanche energy}
absorption capability
● High maximum operating temperature
DO41
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Sy m bol
Rating
repetitive peak reverse voltage
VRRM
1000
continuous reverse voltage
VR
1000
average forward current *1
IF( A V)
1. 00
average forward current *2
IF( A V)
0. 65
repetitive peak forward current
IFR M
10 .0
non-repetitive peak forward current *3
non-repetitive peak reverse avalanche energy *4
storage temperature
IF SM
ERS M
Ts tg
30
10
-65 to +175
junction temperature
Tj
thermal resistance from junction to tie-point (lead length
= 10 mm)
Rth j-tp
thermal resistance from junction to ambient *5
Rth j-a
*1 Ttp = 85 ^℃; lead length = 10 mm;
*2 Tamb = 60 ^℃; PCB mounting,averaged over any 20 ms period
-65 to +175
46
100
*3 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax
*4 IR = 400 mA; Tj = Tj max prior to surge; inductive load switched off
*5 Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer^≥40 μm,
Unit
V
V
A
A
A
A
mJ
℃
℃
℃/ W
℃/ W
http://www.twtysemi.com
[e-mail]
4008-318-123
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