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| BST52 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR DARLINGTON TRANSISTOR | |||
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Product specification
SOT-89-3L Plastic-Encapsulate Transistors
BST52 TRANSISTOR (NPN)
FEATURES
z Low Voltage
z High Current
z Integrated Diode and Resistor
APPLICATIONS
z Industrial Switching Applications: Print Hammer,
Solenoid, Relay and Lamp Driving
MARKING:AS3
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
90
80
500
500
250
150
-55~+150
Unit
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter sustain voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test conditions
Min Typ Max
V(BR)CBO IC=100µA,IE=0
90
VCES
VBE=0,IC=100µA
80
ICES
VBE=0, VCE=80V
50
IEBO
VEB=4V,IC=0
50
VCE=10V, IC=150mA
hFE
VCE=10V, IC=500mA
1000
2000
VCE(sat) IC=500mA,IB=0.5mA
1.3
VBE(sat) IC=500mA,IB=0.5mA
1.9
fT
VCE=5V,IC=500mA, f=100MHz
200
Unit
V
V
nA
nA
V
V
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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