BSS87 Datasheet, PDF (1/1 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

SSMMDD TTyyppee
■ Features
● High-speed switching
● No secondary breakdown.
● Low RDS(on)
IC
Product specification
BSS87
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
0.44+0.1
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-to-source voltage
Gate-to-source voltage
Drain Current
– Continuous
– Pulsed
Total power dissipation @ TA = 25℃
Thermal resistance,junction-to-ambient
Operating and storage temperature range
Symbol
VDSS
VGS
ID
PD
RθJA
TJ, Tstg
3.00+0.1
-0.1
1 Rating
200
±20
280
1.1
1
125
-55 to 150
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Unit
V
V
mA
A
W
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-to-source breakdown voltage
Zero Gate Voltage Drain Current
Gate-source leakage current
Gate-source threshold voltage
Static drain-to-source on-rResistance
Input capacitance
Output capacitance
Transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test conditons
VGS = 0 V, ID = 250 μA
VDS = 200 V, VGS = 0
VGS = ± 20 V, VDS = 0
VDS = VGS, ID = 1.0 mA
VGS = 10V, ID = 400mA
VDS = 25 V, VGS = 0, f = 1 MHz
VDD = 120 V,VGS=10V, ID = 280m A,
RGEN = 6Ω
Min Typ Max Unit
200
V
60 μA
±0.1 μA
0.8
2.8 V
6
Ω
60
25 pF
10
10
12
ns
25
40
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1