BSS63R Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – High Voltage Transistor

SMD Type
SMD Type
Product specification
BSS63R
Features
SOT23 PNP silicon planar
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Power dissipation
Operating and storage temperature range
Symbol
Rating
Unit
VCBO
-110
V
VCEO
-100
V
VEBO
-6
V
IC
-100
mA
Ptot
330
mW
Tj,Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector-base cut-off current
Emitter-base current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Transitional frequency
Output capacitance
* Pulse test: tp = 300 ìs; d
0.02.
Symbol
Testconditons
V(BR)CBO IC=-10ìA
V(BR)CEO IC=-100ìA
V(BR)EBO IE=-10ìA
ICBO
VCB=-90V
VCB=-90V,Ta = 150
IEBO VEB=-6V
VCE(sat) IC=-25mA, IB=-2.5mA
VBE(sat) IC=-25mA, IB=-2.5mA
hFE
IC=-10mA,VCE=-1V
IC=-25mA,VCE=-1V
fT IC=25mA, VCE=-5V, f=35MHz
Cobo VCB=-10V, f=1MHz
Min Typ Max Unit
-110
V
-100
V
-6
V
-100 nA
-50 ìA
-200 nA
-250 V
-900 V
30
30
50 85
MHz
3
pF
Marking
Marking
T6
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