BSS63 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP high-voltage transistor

SMD Type
SMD Type
Transistors
Product specification
BSS63
Features
PNP general purpose amplifier
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Total device dissipation
Derate above 25
Thermal resistance, junction to ambient
Symbol
VCE0
VCBO
VEBO
IC
Tj
Tstg
PD
RèJA
Rating
100
110
6
200
150
-55 to +150
350
2.8
357
Unit
V
V
V
mA
mW
mW/
/W
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-cutoff current
Emitter-base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain - bandwidth product
Symbol
Testconditons
V(BR)CEO IC = 100 ìA, IB = 0
V(BR)CBO IC = 10 ìA, IE = 0
V(BR)EBO IE = 1.0 ìA, IC = 0
ICBO
VCB = 90 V, IE = 0
VCB = 90 V, IE = 0, TA = 150
IEBO VEB = 6.0 V, IC = 0
IC = 10 mA, VCE = 1.0 V
hFE
IC = 25 mA, VCE = 1.0 V
VCE(sat) IC = 25 mA, IB = 2.5 mA
VBE(sat) IC = 25 mA, IB = 2.5 mA
fT
IC = 25 mA, VCE = 5.0,f = 35 MHz
Marking
Marking
T3
Min Typ Max Unit
100
V
110
V
6
V
100 nA
50 ìA
200 nA
30
30
0.25 V
0.9 V
50
MHz
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