BSR302N Datasheet, PDF (1/3 Pages) Infineon Technologies AG – OptiMOS2 Small-Signal-Transistor

OptiMOS^®2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level (4.5V)
• Avalanche rated
• Footprint compatible to SOT23
• dv /dt rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Product specification
BSR302N
Product Summary
V _DS
R _DS(on),max
I_D
V _GS=10 V
V _GS=4.5 V
30 V
23 mΩ
36
3.7 A
PG-SC-59
3
1
2
Type
BSR302N
Package
PG-SC-59
Tape and Reel Information
L6327 = 3000 pcs. / reel
Marking
LEs
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _A=25 °C
T _A=70 °C
Pulsed drain current
I _D,pulse T _A=25 °C
Avalanche energy, single pulse
E _AS
I _D=3.7 A, R _GS=25 Ω
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
dv /dt
I _D=3.7 A, V _DS=16 V,
di /dt =200 A/µs,
T _j,max=150 °C
V _GS
P _tot
T _A=25 °C
T _j, T _stg
ESD Class
JESD22-A114-HMB
Soldering Temperature
IEC climatic category; DIN IEC 68-1
Lead Free
Yes
Packing
Non dry
Value
3.7
2.9
14.7
30
6
±20
0.5
-55 ... 150
0 (0V to 250V)
260 °C
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
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