BSR30 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP medium power transistors

SMD Type
Transistors
Product specification
BSR30,BSR31,BSR33
Features
High current (max. 1 A)
Low voltage (max. 80 V).
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
0.48+0.1
-0.1
0.53+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
BSR30,BSR31
-70
V
VCBO
BSR33
-90
V
Collector-emitter voltage
BSR30,BSR31
-60
V
VCEO
BSR33
-80
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1
A
Peak collector current
ICM
-2
A
Peak base current
IBM
-200
mA
Total power dissipation
Ptot
1.35
W
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient
Rth(j-a)
93
K/W
Thermal resistance from junction to soldering point
Rth(j-s)
13
K/W
1. Base
2. Collector
3. Emiitter
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