BSP19A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Silicon Epitaxial Transistor

SMD Type
Transistors
Product specification
BSP19A
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
Features
High Voltage: V(BR)CEO of 250 and 350 Volts.
Available in 12 mm Tape and Reel
3.00+0.1
-0.1
4
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 Base
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage (Open Base)
VCEO
350
V
Collector-Base Voltage (Open Emitter)
VCBO
400
V
Emitter-Base Voltage (Open Collector)
VEBO
5
V
Collector Current (DC)
IC
1000
mA
Total Power Dissipation @ TA = 25 *
Derate above 25
0.8
Watts
PD
6.4
mW/
Storage Temperature Range
Tstg
-65 to 150
Junction Temperature
TJ
150
Thermal Resistance from Junction-to-Ambient
RèJA
156
/W
Maximum Temperature for Soldering Purposes
TL
Time in Solder Bath
260
10
Sec
* Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
Electrical Characteristics Ta = 25
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain *
Current-Gain — Bandwidth Product *
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Symbol
V(BR)CEO
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
* Pulse Test: Pulse Width 300 ìs, Duty Cycle = 2.0%
Testconditons
IC = 1.0 mA, IB = 0
VCB = 400 V, IE = 0
VEB = 5.0 V, IC = 0
IC = 20 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V, f = 5.0 MHz
IC = 50 mA, IB = 4.0 mA
IC = 50 mA, IB = 4.0 mA
Min Typ Max Unit
350
V
20 nA
10 mA
40
70
MHz
0.5 V
1.3 V
Marking
Marking
SP19A
http://www.twtysemi.com
[e-mail]
4008-318-123
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