BSH112 Datasheet, PDF (1/2 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Product specification
BSH112
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
BSH112 in SOT23.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package
s Gate-source ESD protection diodes.
3. Applications
s Relay driver
c
c
s High speed line driver
s Logic level translator.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
3
2
source (s)
3
drain (d)
03ab44
1
2
SOT23
Symbol
d
g
03ab60
s
N-channel MOSFET
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