BSH105 Datasheet, PDF (1/2 Pages) NXP Semiconductors – N-channel enhancement mode MOS transistor

N-channel enhancement mode
MOS transistor
Product specification
BSH105
FEATURES
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
SYMBOL
d
g
s
QUICK REFERENCE DATA
V_DS = 20 V
I_D = 1.05 A
R_DS(ON) ≤ 250 mΩ (V_GS = 2.5 V)
V_GS(TO) ≥ 0.4 V
GENERAL DESCRIPTION
N-channel, enhancement mode,
logic level, field-effect power
transistor. This device has very low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
The BSH105 is supplied in the
SOT23 subminiature surface
mounting package.
PINNING
PIN
DESCRIPTION
1 gate
2 source
3 drain
SOT23
3
Top view
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DS
V_DGR
V_GS
I_D
I_DM
P_tot
T_stg, T_j
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
R_GS = 20 kΩ
T_a = 25 ˚C
T_a = 100 ˚C
T_a = 25 ˚C
T_a = 25 ˚C
T_a = 100 ˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-a}
PARAMETER
Thermal resistance junction to
ambient
CONDITIONS
FR4 board, minimum
footprint
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
20
20
±8
1.05
0.67
4.2
0.417
0.17
150
UNIT
V
V
V
A
A
A
W
W
˚C
TYP.
300
MAX.
-
UNIT
K/W
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