BS170F Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Product specification
BS170F
FEATURES
* 60Volt V_DS
* R_DS(ON) = 5Ω
S
D
G
PARTMARKING DETAIL – MV
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
P_tot
T_j:T_stg
SOT23
VALUE
60
0.15
3
± 20
330
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV_DSS 60 90
V
I_D=100µA, V_GS=0V
Gate-Source Threshold
Voltage
V_GS(th)
0.8
3
V
I_D=1mA, V_DS= V_GS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
I_GSS
I_DSS
10 nA V_GS=15V, V_DS=0V
0.5 µA V_DS=25V, V_GS=0V
Static Drain-Source On-State R_DS(on)
Resistance (1)
Forward Transconductance g_fs
(1)(2)
5
200
Ω
V_GS=10V, I_D=200mA
SMD Type ^{mS V}DS^{=10V, I}D^=200mA
Input Capacitance (2)
C_iss
60
pF V_DS=10V, V_GS =0V,
f=1MHz
Turn-On Delay Time (2)(3)
Turn-Off Delay Time (2)(3)
t_d(on)
t_d(off)
10 ns
10
ns
V_DD ≈-15V, I_D=600mA
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