BG3130 Datasheet, PDF (1/3 Pages) Infineon Technologies AG – DUAL N-Channel MOSFET Tetrode

Product specification
BG3130...
DUAL N-Channel MOSFET Tetrode
• Two gain controlled input stage for UHF
and VHF -tuners e.g. (NTSC, PAL)
• Two AGC amplifiers in one single package
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction
4
5
6
3
2
1
VPS05604
BG3130
6
5
4
B
A
1
2
3
BG3130R
6
5
4
A
B
1
2
3
AGC
G2
HF
G1
Input
R_G1
V_GG
Drain
HF Output
+ DC
GND
EHA07461
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BG3130
BG3130R
Package
SOT363
SOT363
1=G1
1=G1
Pin Configuration
2=G2 3=D 4=D 5=S
2=S 3=D 4=D 5=G2
6=G1
6=G1
Marking
KAs
KHs
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
V_DS
I_D
±I_G1/2SM
±V_G1/G2S
P_tot
T_stg
T_ch
Thermal Resistance
Parameter
Symbol
Channel - soldering point¹⁾
R_thchs
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
8
25
1
6
200
-55 ... 150
150
Value
≤ 280
Unit
V
mA
V
mW
°C
Unit
K/W
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4008-318-123
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