BFQ67 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Product specification
BFQ67
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Satellite TV tuners and RF portable
communications equipment up to
2 GHz.
DESCRIPTION
Silicon NPN wideband transistor in a
plastic SOT23 package.
alfpage
3
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
1
Top view
2
MSB003
Marking code: V2p.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
G_UM
F
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
maximum unilateral
power gain
noise figure
open emitter
open base
T_s ≤ 97 °C; note 1
I_C = 15 mA; V_CE = 5 V
I_C = 15 mA; V_CE = 8 V
I_C = 15 mA; V_CE = 8 V; f = 1 GHz
I_C = 5 mA; V_CE = 8 V; f = 1 GHz
Note
1. T_s is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
open emitter
open base
open collector
T_s ≤ 97 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
60
−
−
TYP.
−
−
−
−
100
8
14
MAX. UNIT
20
V
10
V
50
mA
300 mW
−
−
GHz
−
dB
−
1.3 −
dB
MIN.
−
−
−
−
−
−65
−
MAX.
20
10
2.5
50
300
+150
175
UNIT
V
V
V
mA
mW
°C
°C
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4008-318-123
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