BFP450 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For medium power amplifiers)

High Linearity Low Noise TY NPN RF Transistor
Product specification
BFP450
1
Features
• Highly linear low noise driver amplifier for all RF frontends
up to 2.5 GHz
• Output compression point OP_1dB = 18.5 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
• Output 3rd order intermodulation point OIP₃ = 31 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
3
4
2
1
• Maximum available gain G_ma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
• Minimum noise figure NF_min = 1.7 dB at 50 mA, 3 V, 1.9 GHz
• Based on Infineon´s reliable, high volume 25 GHz SIEGET™ line
• Easy to use Pb-free (RoHS compliant) standard package with visible
leads
• Qualified according AEC Q101
Application Examples
Driver amplifier
• ISM bands 434 and 868 MHz
• 1.9 GHz cordless phones
• CATV LNA
Transmitter driver amplifier
• 2.4 GHz WLAN and Bluetooth
Output stage LNA for active antennas
• TV, GPS, SDARS, 2.4 GHz WLAN, etc
Suitable for 3 - 5.5 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP450
Package
SOT343
1=B
Pin Configuration
2=E
3=C
4=E
Marking
ANs
http://www.twtysemi.com
[e-mail]
4008-318-123
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