BF824W Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP medium frequency transistor

SMD Type
TransistIoCrs
Product specification
BF824W
Features
Low current (max. 25 mA).
Low voltage (max. 30 V).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-30
V
Collector-emitter voltage
VCEO
-30
V
Emitter-base voltage
VEBO
-4
V
Collector current
IC
-25
mA
Peak collector current
ICM
-25
mA
Total power dissipation *
Ptot
200
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
625
K/W
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Base to emitter voltage
Feedback capacitance
Transition frequency
Symbol
Testconditons
ICBO
IE = 0; VCB = -30 V
IE = 0; VCB = -30 V; Tj = 150
IEBO IC = 0; VEB = -4 V
IC = -1 mA; VCE = -10 V
hFE
IC = -4 mA; VCE = -10 V
VBE IC = -4 mA; VCE = -10 V
Crb IC = 0; VCE = -10 V; f = 1 MHz
VCE = -10 V; f = 100 MHz;
fT
IC = -1 mA
IC = -4 mA
IC = -8 mA
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
-50 nA
-10 ìA
-100 nA
25
25
-900 mV
0.3 pF
250
400
MHz
390
Marking
Marking
F8
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1