BF550 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP medium frequency transistor

SMD Type
TransistIoCrs
Product specification
BF550
Features
Low current (max. 25 mA).
Low voltage (max. 40 V).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-40
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-4
V
Collector current
IC
-25
mA
Peak collector current
ICM
-25
mA
Total power dissipation *
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Base to emitter voltage
Feedback capacitance
Transition frequency
Symbol
Testconditons
ICBO IE = 0; VcB = -30 V
IEBO Ic = 0; VEB = -3 V
hFE Ic = -1 mA; VcE = -10 V
VBE Ic = -1 mA; VcE = -10 V
Cre Ic = -1 mA; VcB = -10 V; f = 1 MHz
fT
IC = -1 mA; VCE = -10 V; f = 100 MHz
Min Typ Max Unit
-50 nA
-100 nA
50
750
mV
0.5
pF
325
MHz
Marking
Marking
LA
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