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BF2040 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) | |||
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TY N-Channel MOSFET Tetrode
⢠For low noise , high gain controlled
input stages up to 1GHz
⢠Operating voltage 5 V
Product specification
BF2040...
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF2040
BF2040R
BF2040W
Package
Pin Configuration
SOT143 1=S 2=D 3=G2 4=G1 -
-
SOT143 1=D 2=S 3=G1 4=G2 -
-
SOT343 1=D 2=S 3=G1 4=G2 -
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS ⤠76 °C, BF2040, BF2040R
TS ⤠94 °C, BF2040W
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point1)
BF2040, BF2040R
BF2040W
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Symbol
Rthchs
Value
8
20
10
7
200
200
-55 ... 150
150
Value
⤠370
⤠280
1For calculation of RthJA please refer to Application Note Thermal Resistance
Marking
NFs
NFs
NF
Unit
V
mA
V
mW
°C
Unit
K/W
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4008-318-123
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