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| BD441 Datasheet, PDF (1/1 Pages) STMicroelectronics – NPN power transistor | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
BD439/441 TRANSISTOR (NPN)
FEATURES
Amplifier and Switching Applications
TO-126
MAXIMUM RATINGS(Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
BD439
60
V
BD441
80
VCEO
Collector-Emitter Voltage BD439
60
V
BD441
80
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current âContinuous
4
A
PC
Collector Power Dissipation
1.25
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
Test conditions
IC=100μA,IE=0
Collector-emitter breakdown voltage
VCEO(SUS)(1)
IC=100mA,IB=0
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IE=100μA,IC=0
VCB=60V,IE=0
VCB=80V,IE=0
Min
BD439 60
BD441 80
BD439 60
BD441 80
5
BD439
BD441
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
(1)Pulse test
IEBO
hFE(1) (1)
hFE(2) (1)
VEB=5V,IE=0
VCE=1V,IC=500mA
VCE=5V,IC=10mA
hFE(3) (1)
VCE=1V,IC=2A
VCE(sat) (1)
VBE(1)
IC=3A,IB=0.3A
VCE=1V,IC=2A
fT
VCE=1V,IC=250mA
40
BD439 20
BD441 15
BD439 25
BD441 15
3
Typ Max Unit
V
V
V
100 μA
1
mA
475
0.8
V
1.1
V
MHz
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