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| BD440 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
BD438,440,442 TRANSISTOR (PNP)
FEATURES
Amplifier and Switching Applications
TO-126
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
BD438
-45
BD440
-60
V
BD442
-80
VCEO
Collector-Emitter Voltage BD438
-45
BD440
-60
V
BD442
-80
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current âContinuous
-4
A
PC
Collector Power Dissipation
1.25
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
1. EMITTER
2. COLLECOTR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
(1)Pulse test.
Symbol
Test conditions
Min Typ
V(BR)CBO
IC=-100μA, IE=0
BD438 -45
BD440 -60
BD442 -80
VCEO(SUS) (1)
IC=-100mA, IB=0
BD438 -45
BD440 -60
BD442 -80
V(BR)EBO
IE=-100μA, IC=0
-5
VCB=-45V, IE=0
ICBO
VCB=-60V, IE=0
VCB=-80V, IE=0
IEBO
VEB=-5V, IC=0
BD438
BD440
BD442
hFE(1) (1)
VCE=-5V, IC=-10mA
BD438 30
BD440 20
BD442 15
hFE(2) (1)
VCE=-1V, IC=-500mA
BD438 85
BD440/BD442 40
hFE(3) (1)
VCE=-1V, IC=-2A
BD438 40
BD440 25
BD442 15
VCE(sat) (1)
IC=-3A, IB=-300mA
BD438
BD440/BD442
VBE(1)
VCE=-1V, IC=-2A
BD438
BD440/BD442
fT
VCE=-1V, IC=-250mA, f=1MHz
3
Max Unit
V
V
V
-100 μA
-1
μmA
375
475
-0.7
-0.8
V
-1.2
-1.5
V
MHz
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