BD438 Datasheet, PDF (1/1 Pages) Motorola, Inc – Plastic Medium Power Silicon PNP Transistor

Features
Medium Power Linear and Switching
Applications
Product specification
BD438
1 EMITTER
2 COLLECTOR
3 BASE
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse) *
Base Current
Collector Dissipation (TC=25 )
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
* Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed
Rating
-45
-45
-45
-5
-4
-7
-1
25
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
Base-Emitter ON Voltage *
Current Gain Bandwidth Product
Symbol
Testconditons
VCEO(sus) IC = -100mA, IB = 0
ICBO VCB = -45V, IE = 0
ICES VCE = -45V
IEBO VEB = -5V, IC = 0
VCE = -5V, IC = -10mA
hFE VCE = -1V, IC = -500mA
VCE = -1V, IC = -2A
VCE(sat) IC = -2A, IB = -0.2A
VBE(on)
VCE =-5V, IC = -10mA
VCE =-1V, IC = -2A
fT
VCE = -1V, IC = -250mA
* Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed
Unit
V
V
V
V
A
A
A
W
Min Typ Max Unit
-45
V
-100 A
-100 A
-1 mA
30 130
85 140
40
-0.2 -0.6 V
-0.58
V
-1.2 V
3
MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
1
1 of 1