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| BD437 Datasheet, PDF (1/1 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
BD433/435/437 TRANSISTOR (NPN)
FEATURES
TO-126
Amplifier and Switching Applications
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
BD433
22
BD435
32
V
BD437
45
1. EMITTER
2. COLLECTOR
VCEO
Collector-Emitter Voltage BD433
22
BD435
32
V
3. BASE
BD437
45
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current âContinuous
4
A
PC
Collector Power Dissipation
1.25
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
(1)Pulse test.
V(BR)CBO
IC=100μA,IE=0
BD433 22
BD435 32
BD437 45
VCE(SUS)(1)
IC=100mA,IB=0
BD433 22
BD435 32
BD437 45
V(BR)EBO IE=100μA,IC=0
5
VCB=22V,IE=0
ICBO
VCB=32V,IE=0
VCB=45V,IE=0
VCE=22V,IE=0
ICEO
VCE=32V,IE=0
VCE=45V,IE=0
BD433
BD435
BD437
BD433
BD435
BD437
IEBO
VEB=5V,IE=0
hFE(1) (1)
VCE=1V,IC=500mA
85
hFE(2) (1)
VCE=5V,IC=10mA BD433/BD435
BD437
40
30
hFE(3) (1)
VCE=1V,IC=2A
BD433/BD435
50
BD437 40
VCE(sat) (1)
IC=2A,IB=0.2A
BD433/BD435
BD437
VBE(1)
VCE=1V,IC=2A
BD433/BD435
BD437
fT
VCE=1V,IC=250mA
3
Typ Max Unit
V
V
V
100 μA
100 μA
1
mA
375
0.5
0.6
V
1.1
1.2
V
MHz
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