BD435 Datasheet, PDF (1/1 Pages) ON Semiconductor – Plastic Medium Power Silicon NPN Transistor

Features
Medium Power Linear and Switching Applications
Product specification
BD435
1 EMITTER
2 COLLECTOR
3 BASE
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current
Collector dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
32
V
VCEO
32
V
VEBO
5
V
IC
4
A
ICP
7
A
IB
1
A
PC
36
W
Tj
150
Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-emitterSustainingVoltage
CollectorCut-offCurrent
CollectorCut-offCurrent
EmitterCut-offCurrent
DCCurrentGain
Collector-emittersaturationvoltage
Symbol
VCEO(SUS)
I _CBO
ICEO
IEBO
Testconditons
IC = 100 mA, IB = 0
V CB _{= 32 V, I}E _{= 0}
V_{CE = 32 V, VBE = 0}
VEB = 5 V, IC= 0
VCE = 5 V, IC =10mA
h FE
VCE = 1 V ,IC = 500mA
VCE = 1 V, IC = 2 A
VCE (sat) IC = 2 A, IB =0.2A
Base-EmitterONVoltage
CurrentGainBandwidthProduct
VBE (on)
fT
VCE = 1 V, IC = 2 A
VCE = 1 V, IC =250mA
Min Typ Max Unit
32
V
100 ^ìA
100 ìA
1 _mA
40 130
85 140
50
0.2 0.5 V
1.1 ^V
3
MHz
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