BD434 Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – PNP SILICON EPIBASE TRANSISTORS

Product specification
TO-126 Plastic-Encapsulate Transistors
BD434,436 TRANSISTOR (PNP)
FEATURES
Amplifier and Switching Applications
TO-126
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
BD434
-22
V
BD436
-32
V_CEO
Collector-Emitter Voltage BD434
-22
V
BD436
-32
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current –Continuous
-4
A
P_C
Collector Power Dissipation
1.25
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
1. EMITTER
2. COLLECOTR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
(1)_{Pulse test.}
Symbol
Test conditions
Min
V_(BR)CBO
I_C=-100μA,I_E=0
BD434 ^-22
BD436 _-32
V_CEO(SUS)(1) ^{IC=-100mA,IB=0}
BD434 ^-22
BD436 _-32
V_(BR)EBO
I_CBO
I_EBO
h_FE(1) ⁽¹⁾
h_FE(2) ⁽¹⁾
h_FE(3) ⁽¹⁾
V_CE(sat) ⁽¹⁾
V_BE(1)
f_T
I_E=-100μA, I_C=0
V_CB=-22V,I_E=0
V_CB=-32V, I_E=0
V_EB=-5V, I_C=0
V_CE=-5V, I_C=-10mA
V_CE=-1V, I_C=-500mA
V_CE=-1V, I_C=-2A
I_C=-2A, I_B=-0.2A
V_CE=-1V, I_C=-2A
V_CE=-1V, I_C=-250mA
-5
BD434
BD436
40
85
50
3
Typ Max Unit
V
V
V
-100 μA
-1
mA
375
-0.5
V
-1.1
V
MHz
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