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| BD237 Datasheet, PDF (1/1 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
BD233/235/237 TRANSISTOR (NPN)
FEATURES
Complement to BD234/236/238 respectively
TO-126
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage BD233
45
V
BD235
60
BD237
100
VCEO
Collector-Emitter Voltage BD233
45
V
BD235
60
BD237
80
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current âContinuous
2
A
PC
PC
RÎJA
Collector Dissipation
Collector Dissipation (Tc=25â )
Thermal Resistance from Junction to Ambient
1.25
25
100
W
W
â/W
RÎJC
TJ
Tstg
Thermal Resistance from Junction to Case
Junction Temperature
Storage Temperature
5
150
-55~+150
â/W
â
â
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
BD233
45
BD235 V(BR)CBO IC= 1mA, IE=0
60
BD237
100
Collector-emitter breakdown voltage
BD233
45
BD235 V(BR)CEO IC= 100mA, IB=0
60
BD237
80
Emitter-base breakdown voltage
V(BR)EBO IE= 1mA, IC=0
5
Collector cut-off current
BD233
VCB= 45V, IE=0
BD235
ICBO
VCB= 60V, IE=0
BD237
VCB= 100V, IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
HFE(1)
VCE= 2V, IC=150mA
40
HFE(2)
VCE=2V, IC= 1A
25
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC=1A, IB= 100m A
VCE=10V, Ic=250mA
fT
3
f =10MHz
Max
100
1
0.6
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
Unit
V
V
V
µA
mA
V
MHz
1 of 1
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