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| BD234 Datasheet, PDF (1/1 Pages) STMicroelectronics – SILICON PNP TRANSISTOR | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
BD234/236/238 TRANSISTOR (PNP)
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage BD234
-45
V
BD236
-60
BD238 -100
VCEO
Collector-Emitter Voltage BD234
-45
V
BD236
-60
BD238
-80
VEBO
Emitter-Base Voltage
BD234
V
BD236
-5
BD238
IC
Collector Current âContinuous
-2
A
PC
Collector Power Dissipation
1.25
W
TJ
Junction Temperature
Tstg
Storage Temperature
150
â
-55-150
â
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
BD234
BD236
BD238
BD234
BD236
BD238
BD234
BD236
BD238
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
IC=-1mA,IE=0
IC=-100mA,IB=0
IE=-1mA,IC=0
VCB=-45V, IE=0
VCB=-60V, IE=0
VCB=-100V, IE=0
VEB=-5V, IC=0
hFE(1) VCE=-2V, IC=-150mA
hFE(2) VCE=-2V, IC=-1A
VCE(sat)
fT
IC=-1A, IB=-100m A
VCE=-10V, IC=-250mA,
f =10MHz
Min Max
-45
-60
-100
-45
-60
-80
-5
-100
-1
40
25
-0.6
3
Unit
V
V
V
µA
mA
V
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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