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| BD140 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
BD140 TRANSISTOR (PNP)
FEATURES
z High Current
z Complement To BD139
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-80
-80
-5
-1.5
1.25
100
150
-55~+150
TO â 126
1. EMITTER
2. COLLECTOR
3. BASE
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
T est conditions Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.1mA,IE=0
-
V
Collector-emitter sustaining voltage
VCEO(SUS)* IC=-0.03A,IB=09
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
IEBO
hFE(1)*
hFE(2)*
hFE(3)*
VCE(sat)*
VBE*
*Pulse test: pulse width â¤350μs, duty cycle⤠2.0%.
IE=-0.1mA,IC=0
-5
VCB=-30V,IE=0
VEB=-5V,IC=0
VCE=-2V, IC=-150mA
40
VCE=-2V, IC=-5mA
25
VCE=-2V, IC=-500mA
25
IC=-500mA,IB=-50mA
VCE=-2V, IC=-500mA
V
-0.1
μA
-10
μA
250
-0.5
V
-1
V
CLASSIFICATION OF hFE(1)
RANK
6
RANGE
40-100
10
63-160
16
100-250
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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