 English |
|
|
|
|
|
|
|
| BD139 Datasheet, PDF (1/2 Pages) Unisonic Technologies – NPN POWER TRANSISTORS | |||
| |||
|
Product specification
TO-126 Plastic-Encapsulate Transistors
BD135/137/139 TRANSISTOR (NPN)
TO â 126
FEATURES
z High Current
z Complement To BD136, BD138 And BD140
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
BD135
BD137
Collector-Emitter Voltage
BD139
BD135
BD137
Emitter-Base Voltage
BD139
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
45
60
80
45
60
80
5
1.5
1.25
100
150
-55~+150
3. BASE
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
BD135
BD137
45
V
60
BD139
80
Collector-emitter sustaining voltage
VCEO(SUS)*
IC=0.03A,IB=0
BD135
BD137
45
V
60
BD139
80
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
5
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
IEBO
VEB=5V,IC=0
hFE(1)*
VCE=2V, IC=150mA
40
hFE(2)*
VCE=2V, IC=5mA
25
hFE(3)*
VCE=2V, IC=500mA
25
VCE(sat)*
IC=500mA,IB=50mA
VBE*
VCE=2V, IC=500mA
*Pulse test: pulse width â¤350μs, duty cycle⤠2.0%.
V
0.1
μA
10
μA
250
0.5
V
1
V
CLASSIFICATION OF hFE(1)
RANK
6
10
16
RANGE
40-100
63-160
100-250
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese