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| BD136 Datasheet, PDF (1/2 Pages) Motorola, Inc – Plastic Medium Power Silicon PNP Transistor | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
BD136/138/140 TRANSISTOR (PNP)
TO â 126
FEATURES
z High Current
z Complement To BD135, BD137 And BD139
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
BD136
BD138
Collector-Emitter Voltage
BD140
BD136
BD138
Emitter-Base Voltage
BD140
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-45
-60
-80
-45
-60
-80
-5
-1.5
1.25
100
150
-55~+150
3. BASE
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.1mA,IE=0
BD136
BD138
-45
V
-60
BD140
-80
Collector-emitter sustaining voltage
VCEO(SUS)*
IC=-0.03A,IB=0
BD136
BD138
-45
V
-60
BD140
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
IEBO
hFE(1)*
hFE(2)*
hFE(3)*
VCE(sat)*
VBE*
*Pulse test: pulse width â¤350μs, duty cycle⤠2.0%.
-80
IE=-0.1mA,IC=0
-5
VCB=-30V,IE=0
VEB=-5V,IC=0
VCE=-2V, IC=-150mA
40
VCE=-2V, IC=-5mA
25
VCE=-2V, IC=-500mA
25
IC=-500mA,IB=-50mA
VCE=-2V, IC=-500mA
V
-0.1
μA
-10
μA
250
-0.5
V
-1
V
CLASSIFICATION OF hFE(1)
RANK
6
10
16
RANGE
40-100
63-160
100-250
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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