BCX71G Datasheet, PDF (1/1 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR

SMD Type
TransistIoCrs
Product specification
BCX71G
Features
PNP Epitaxial Silicon Transistor
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power Dissipation
Storage Temperature
Symbol
Rating
Unit
VCBO
-45
V
VCEO
-45
V
VEBO
-5
V
IC
-100
mA
PC
350
mW
TSTG
150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capactance
Noise Figure
Turn On Time
Turn Off Time
Marking
Marking
BG
Symbol
Testconditons
Min Typ Max Unit
BVCEO IC= -2mA, IB=0
-45
V
BVEBO IE= -1ìA, IC=0
-5
V
ICES VCE= -32V, VBE=0
-20 nA
VCE= -5V, IC= -2mA
hFE
VCE= -1V, IC= -50ìA
120
220
60
IC= -10mA, IB= -0.25mA
VCE (sat)
IC= -50mA, IB= -1.25mA
-0.25 V
-0.55 V
IC= -10mA, IB= -0.25mA
VBE (sat)
IC= -50mA, IB= -1.25mA
-0.6
-0.68
-0.85 V
-1.05 V
VBE (on) VCE= -5V, IC= -2mA
-0.6
-0.75 V
Cob VCB= -10V, IE=0, f=1MHz
pF
NF IC=0.2mA, VCE=5V,f=1KHz, RS=2KÙ
6
dB
tON IC= -10mA, IB1= -1mA
150 ns
tOFF IB2= -1mA, VBB=3.6V,RL=990Ù
800 ns
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