BCX41 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SMD Type
TransistIoCrs
Product specification
BCX41
Features
SOT23 NPN silicon planar
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Symbol
Rating
Unit
VCES
125
V
VCEO
125
V
VEBO
5
V
ICM
1
A
Peak pulse current
IC
800
mA
Base current
Power dissipation
Operating and storage temperature range
IB
100
mA
Ptot
330
mW
Tj,Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-emitter cut-off current
Emitter-base current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
DC current gain *
Transitional frequency
Output capacitance
* Pulse test: tp = 300 ìs; d
0.02.
Symbol
Testconditons
VCE=100V
ICES
VCE=100V,Tamb = 150
ICEX ^{VCE=100V,VBE=0.2V, Tamb = 85}
VCE=100V,VBE=0.2V, Tamb = 125
IEBO VEB=4V
VCE(sat) IC=300mA, IB=30mA
VBE(sat) IC=300mA, IB=30mA
IC=100ìA,VCE=1V
hFE IC=100mA,VCE=1V
IC=200mA,VCE=1V
fT IC=10mA, VCE=5V, f=20MHz
Cobo VCB=10V, f=1MHz,IE=Ie=0
Min Typ Max Unit
100 nA
10 ìA
10 ìA
75 ìA
100 nA
0.9 V
1.4 V
25
63
40
100
MHz
12
pF
Marking
Marking
EK
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