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| BCW60A Datasheet, PDF (1/2 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR | |||
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SMD Type
TransistIoCrs
Product specification
BCW60A/B/C/D
Features
NPN epitaxial silicon transistor.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Storage temperature
Symbol
Rating
Unit
VCBO
32
V
VCEO
32
V
VEBO
5
V
IC
100
mA
Pc
350
mW
Tstg
150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
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